@Article{SilvaFabbLima:1982:ElHoEn,
               author = "Silva, Ant{\^o}nio Ferreira da and Fabbri, Maur{\'{\i}}cio and 
                         Lima, Ivan Costa da Cunha",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)}",
                title = "Electron hopping energy influence on the specific heat of 
                         phosphorus doped silicon",
              journal = "Physica Status Solid",
                 year = "1982",
               volume = "Submitted",
                pages = "1--17",
             keywords = "Specific heat, doped semiconductors.",
             abstract = "lhe electronic specific heat of the uncompensanted Si :P is 
                         calculated via a previously developed theory for impurity band in 
                         semiconductors. lhe theory is investigated further in arder to 
                         take into account the effect of correlation, as well as overlap on 
                         the electron hopping energy integral via Heitler-London 
                         two-particle wave fUnctions. The calculated specific heat shows a 
                         rough agreement when compared to the experimental data over a wide 
                         range of donor impurity concentration. The comparUon with AMO-MT 
                         calculation shows a large enhancement due to a stronger electron 
                         corre lation. The results of the highly-correlated-electron-gas 
                         modal and inhomogeneity model are shown for the sake of 
                         comparison.",
             language = "en",
           targetfile = "2301.pdf",
        urlaccessdate = "2024, Apr. 29"
}